Talk:MESFET
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July 2011 - Dec 2011
[edit]FET split
[edit]splitup of article Field effect transistor in progress, please see Talk:Field effect transistor Pjacobi 15:30, 19 Jul 2004 (UTC)
- Done Pjacobi 21:27, 19 Jul 2004 (UTC)
Why not Si?
[edit]Are there no Si MESFETs because it's impossible, or because Si JFETs or MOSFETs are good enough to fill the role that you'd otherwise want a MESFET for?--Joel 23:50, 21 March 2006 (UTC)
MESFETs aren't usually made in Si because the mobility and saturation velocity are significantly lower in Si than in other materials. See the last paragraph of http://ece-www.colorado.edu/~bart/book/mesfet.htm. Chrisfez 08:04, 16 May 2006 (UTC)
- However, it is not at all impossible to make a fully functional Si MESFET. I've removed the text in the article that suggests such. I'd think that Si MESFETs are rare simply because of the ubiquity of the Si MOSFET process and because very high-speed applications often lend themselves to certain III-V systems because of the aforementioned carrier mobility and saturation velocity advantages. I'd also venture to guess that MESFETs are an increasingly rare construction with the improvement of generally superior heterojunction systems. (the obvious advantage of the MESFET being its very simple design) -- mattb
@ 2007-01-02T21:37Z
- The Lepkowski ref for 45 GHz says Silicon MESFET. - Rod57 (talk) 13:37, 4 January 2016 (UTC)
Introductory paragraph, last sentence
[edit]This sentence is confusing. - 65.96.171.132 17 February 2011
- if you mean "From a digital circuit design perspective, it is increasingly difficult to use MESFETs as the basis for digital integrated circuits as the scale of integration goes up, compared to CMOS silicon based fabrication" - I'd agree. Needs explanation and source. - Rod57 (talk) 13:43, 4 January 2016 (UTC)
India Education Program course assignment
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by PrimeBOT (talk) on 19:56, 1 February 2023 (UTC)
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